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IRFR812TRPBF 4/10/12 www.irf.com 1 hexfet power mosfet features and benefits ?
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pd -97773 s d g notes through are on page 2 d-pak IRFR812TRPBF v dss r ds(on) typ. trr typ. i d 500v 1.85 75ns 3.6a applications ? "# ? $ # ? "% absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 3.6 i d @ t c = 100c continuous drain current, v gs @ 10v 2.3 a i dm pulsed drain current 14.4 p d @t c = 25c power dissipation 78 w linear derating factor 0.63 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 32 v/ns t j operating junction and -55 to + 150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) mounting torque, 6-32 or m3 screw diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 3.6 mosfet symbol (body diode) a showing the i sm pulsed source current ??? ??? 14.4 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 3.6a, v gs = 0v t rr reverse recovery time ??? 75 110 ns t j = 25c, i f = 3.6a ??? 94 140 t j = 125c, di/dt = 100a/ s q rr reverse recovery charge ??? 135 200 nc t j = 25c, i s = 3.6a, v gs = 0v ??? 220 330 t j = 125c, di/dt = 100a/ s i rrm reverse recovery current ??? 3.2 4.8 a t j = 25c, i s = 3.6a, v gs = 0v di/dt = 100a/ s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) 10lb in (1.1n m)

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 93mh, r g = 25 , i as = 1.8a. (see figure 13). i sd = 3.6a, di/dt 520a/ s, v dd v (br)dss , t j 150c. pulse width 300 s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff.(er) is a fixed capacitance that stores the same energy as c oss while v ds is rising from 0 to 80% v dss .

when mounted on 1" square pcb (fr-4 or g-10 material) static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 500 ??? ??? v . 0. 1. . .0 .0 a ??? ??? 2.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 7.6 ??? ??? s q g total gate charge ??? ??? 20 q gs gate-to-source charge ??? ??? 7.3 nc q gd gate-to-drain ("miller") charge ??? ??? 7.1 t d(on) turn-on delay time ??? 14 ??? t r rise time ??? 22 ??? ns t d(off) turn-off delay time ??? 24 ??? t f fall time ??? 17 ??? c iss input capacitance ??? 810 ??? c oss output capacitance ??? 47 ??? c rss reverse transfer capacitance ??? 7.3 ??? c oss output capacitance ??? 610 ??? pf v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 16 ??? v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance ??? 5.9 ??? c oss eff. (er) effective output capacitance ??? 37 ??? (energy related) avalanche characteristics symbol parameter typ. units e as single pulse avalanche energy ??? mj i ar avalanche current ??? a e ar repetitive avalanche energy ??? mj thermal resistance symbol parameter typ. units r jc junction-to-case ??? r ja junction-to-ambient (pcb mount) ??? c/w r ja junction-to-ambient ??? v ds = v gs , i d = 250 a v ds = 500v, v gs = 0v v ds = 400v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250 a reference to 25c, i d = 250 a v gs = 10v, i d = 2.2a v gs = 20v conditions v ds = 50v, i d = 2.2a v gs = -20v i d = 3.6a v ds = 400v v gs = 10v, see fig.14a &14b v dd = 250v i d = 3.6a r g = 17 = 10 . 1 1 v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 1.8 7.8 max. 150 v gs = 0v,v ds = 0v to 400v 110 max. 1.6 40

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 6.2v 5.9v 5.8v 5.6v 5.5v bottom 5.3v 60 s pulse width tj = 25c 5.3v 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 3.6a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 6.2v 5.9v 5.8v 5.6v 5.5v bottom 5.3v 60 s pulse width tj = 150c 5.3v

4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage fig 6. typ. breadown voltage vs. temperature 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 500 550 600 650 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 250ua 0 4 8 12 16 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 400v v ds = 250v v ds = 100v i d = 3.6a

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 t c , casetemperature (c) 0 1 2 3 4 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 01234567 i d , drain current (a) 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 20v fig 9. typical rdson vs. drain current

6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. maximum safe operating area 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.4a 0.7a bottom 1.8a fig 14a. gate charge test circuit fig 14b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s fig 13b. unclamped inductive waveforms fig 13a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

www.irf.com 7 fig 16.

for n-channel hexfet power mosfets
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f ( ) 1 * % 0.1 "#"" $ + -

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note: for the most current drawing please refer to ir website at http://www .irf.com/package/
packages are not recommended for surface mount application. int ernat ional as s embled on ww 16, 2001 in the assembly line "a" or note: "p" in as s embly line pos ition example: lot code 1234 t his is an irfr120 with assembly indicates "l ead-f ree" product (opt ional) p = designat es lead-free a = assembly site code part number week 16 dat e code year 1 = 2001 rectifier international logo lot code as s e mb l y 34 12 irfr120 116a line a 34 rect ifier logo irf r120 12 assembly lot code year 1 = 2001 dat e code part number week 16 "p" in as s embly line position indicates "lead-free" qualification to the cons umer-level p = designat es lead-free product qual if ied t o t he consumer level (optional)

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawing p lease refer to ir website at http://www .irf.com/package/ data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. i r world headquarters: 101n sepulveda., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 04/12

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